標題: Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition
作者: Lee, Ya-Ju
Yang, Zu-Po
Lo, Fang-Yuh
Siao, Jhih-Jhong
Xie, Zhong-Han
Chuang, Yi-Lun
Lin, Tai-Yuan
Sheu, Jinn-Kong
光電系統研究所
Institute of Photonic System
公開日期: 1-五月-2014
摘要: High-efficient ZnO-based nanorod array light-emitting diodes (LEDs) were grown by an oblique-angle deposition scheme. Due to the shadowing effect, the inclined ZnO vapor-flow was selectively deposited on the tip surfaces of pre-fabricated p-GaN nanorod arrays, resulting in the formation of nanosized heterojunctions. The LED architecture composed of the slanted n-ZnO film on p-GaN nanorod arrays exhibits a well-behaving current rectification of junction diode with low turn-on voltage of 4.7 V, and stably emits bluish-white luminescence with dominant peak of 390 nm under the operation of forward injection currents. In general, as the device fabrication does not involve passivation of using a polymer or sophisticated material growth techniques, the revealed scheme might be readily applied on other kinds of nanoscale optoelectronic devices. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
URI: http://dx.doi.org/10.1063/1.4874455
http://hdl.handle.net/11536/24737
ISSN: 2166-532X
DOI: 10.1063/1.4874455
期刊: APL MATERIALS
Volume: 2
Issue: 5
結束頁: 
顯示於類別:期刊論文


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