標題: A gold-free fully copper-metallized InP heterojunction bipolar transistor using non-alloyed ohmic contact and platinum diffusion barrier
作者: Chang, SW
Chang, EY
Lee, CS
Chen, KS
Tseng, CW
Tu, YY
Lee, CT
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: copper;InP;HBT;metallization;diffusion barrier
公開日期: 2005
摘要: A gold-free, fully Cu-metallized InP heterojunction bipolar transistor using non-alloyed Ti/Pt/Cu and Pt/Ti/Pt/Cu ohmic contacts and platinum diffusion barrier has been successfully fabricated. The InGaAs/Ti/Pt/Cu ohmic structure was stable after annealing up to 350 degrees C as judged from the Auger depth profiles. A current-accelerated stress test was conducted on the device with a current density J(C) = 80kA/cm(2) for 24h, and the current gain showed no degradation after the current stress. The devices were also thermally annealed at 200 degrees C for 3 h and showed almost no change in the electrical parameters after the heat treatment. The results show that the Au-free, fully Cu-metallized InP heterojunction bipolar transistor (HBT) can be realized using non-alloyed ohmic contacts and Pt diffusion barrier.
URI: http://hdl.handle.net/11536/24735
http://dx.doi.org/10.1143/JJAP.44.L899
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.L899
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 44
Issue: 28-32
起始頁: L899
結束頁: L900
顯示於類別:期刊論文


文件中的檔案:

  1. 000231426100003.pdf