標題: GROWTH OF ZNGA2O4 PHOSPHOR BY RADIO-FREQUENCY MAGNETRON SPUTTERING
作者: HSIEH, IJ
FENG, MS
KUO, KT
LIN, P
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-六月-1994
摘要: ZnGa2O4 films have been prepared by radio frequency (RF) magnetron sputtering at various total pressure, RF power, and substrate temperatures. Microstructure and crystallographic orientation were characterized by x-ray diffraction Surface morphologies were observed by scanning electron microscope. In addition, cathodoluminescence (CL) measurement was employed to observe the emission spectra of ZnGa2O4 films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 500-degrees-C in this investigation. A blue cathodoluminescent emission peaked at 470 nm was observed. Good luminescent properties were observed in the films which exhibit the standard ZnGa2O4 x-ray diffraction pattern.
URI: http://hdl.handle.net/11536/2473
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 141
Issue: 6
起始頁: 1617
結束頁: 1621
顯示於類別:期刊論文


文件中的檔案:

  1. A1994NQ33800039.pdf