標題: Effects of Ga2O3 deposition power on electrical properties of cosputtered In-Ga-Zn-O semiconductor films and thin-film transistors
作者: Lee, Yih-Shing
Chang, Chih-Hsiang
Lin, Yuan-Che
Lyu, Rong-Jhe
Lin, Horng-Chih
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-May-2014
摘要: In this study, we have successfully fabricated In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) with various Ga2O3 deposition powers prepared using a two radio-frequency (RF) (ceramics targets: In2O3 and Ga2O3) and one direct-current (DC) (metallic target: Zn) magnetron cosputtering system at room temperature. The carrier concentration for the IGZO films decreases to less than 3 x 10(16) cm(-3) when the Ga2O3 deposition power is 175W and Hall mobility decreases from 12.8cm(2)V(-1) s(-1) and saturates at 4.6 cm(2)V(-1) s(-1) with increasing Ga2O3 deposition power. The increase in the resistivity of the cosputtered films correlates with the decrease in the crystallinity of the InGaZn7O10 phase and the phase transformation from InGaZn7O10 to InGaZn2O5 with increasing Ga2O3 deposition power. With an optimum Ga2O3 deposition power of 150W, cosputtered IGZO TFTs with a higher, saturated drain current of 4.5 mu A, good saturation mobility, mu(sat) of 4.92cm(2)V(-1) s(-1), I-on/I-off of 10(9), a low subthreshold swing (SS) of 0.27V/decade, and R-SD of 30 k Omega have been successfully fabricated. (C) 2014 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.53.05HA02
http://hdl.handle.net/11536/24721
ISSN: 0021-4922
DOI: 10.7567/JJAP.53.05HA02
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 53
Issue: 5
結束頁: 
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