標題: INVESTIGATION OF NEW NARROW-BANDWIDTH A-SI-H PHOTODETECTOR
作者: SHIN, NF
HONG, JW
WU, YF
JEN, TS
CHANG, CY
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: AMORPHOUS SILICON;PHOTODETECTORS
公開日期: 1-六月-1994
摘要: A narrow-bandwidth hydrogenated amorphous silicon (a-Si : H) photodetector with a basic structure of Al/n+-i-p+-i-n-i-p-i-n+/ITO/glass has been investigated. The spectral response of this new photodetector was found to be affected by the absorption coefficient of a-Si:H material, surface recombination current, device layer thicknesses, and applied bias. The spectral response of this device reveals a measured minimum FWHM of 58 nm at zero volt bias. The peak wavelength in the visible spectrum can be shifted from 400 nm (purple) to 550 nm (green) by decreasing the bias voltage from 5 to 0 V. The optoelectronic characteristics of this photodetector fit theoretically using suitable quantitative estimates.
URI: http://dx.doi.org/10.1049/ip-opt:19949800
http://hdl.handle.net/11536/2471
ISSN: 1350-2433
DOI: 10.1049/ip-opt:19949800
期刊: IEE PROCEEDINGS-OPTOELECTRONICS
Volume: 141
Issue: 3
起始頁: 150
結束頁: 156
顯示於類別:期刊論文


文件中的檔案:

  1. A1994NZ55900002.pdf