標題: Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits
作者: Lin, Yen-Fu
Xu, Yong
Wang, Sheng-Tsung
Li, Song-Lin
Yamamoto, Mahito
Aparecido-Ferreira, Alex
Li, Wenwu
Sun, Huabin
Nakaharai, Shu
Jian, Wen-Bin
Ueno, Keiji
Tsukagoshi, Kazuhito
電子物理學系
Department of Electrophysics
公開日期: 28-五月-2014
摘要: We report ambipolar charge transport in a-molybdenum ditelluride (MoTe2) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (V-bg) and drain-source voltage (V-ds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.
URI: http://dx.doi.org/10.1002/adma.201305845
http://hdl.handle.net/11536/24707
ISSN: 0935-9648
DOI: 10.1002/adma.201305845
期刊: ADVANCED MATERIALS
Volume: 26
Issue: 20
起始頁: 3263
結束頁: +
顯示於類別:期刊論文


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  1. 000336999800012.pdf