標題: On the Origin of Anomalous OffCurrent Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure
作者: Chen, Ching-En
Chang, Ting-Chang
Chen, Hua-Mao
You, Bo
Yang, Kai-Hsiang
Ho, Szu-Han
Tsai, Jyun-Yu
Liu, Kuan-Ju
Lu, Ying-Hsin
Hung, Yu-Ju
Tai, Ya-Hsiang
Tseng, Tseung-Yuen
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: Hot carrier stress;double diffused drain metal-oxide-semiconductor;(DDDMOS);shallow trench isolation (STI)
公開日期: 1-六月-2014
摘要: This letter investigates the abnormal OFF-current behavior induced by hot carrier stress (HCS) in p-channel double diffused drain metal-oxide-semiconductor transistors with a shallow trench isolation (STI) structure. According to ISE-TCAD simulation, the electric field at the drain-side corners of the high-voltage n-well (HVNW) adjacent to the STI trench is stronger than the electric field in the channel center in width direction. Moreover, because a nitride layer acts as a buffer in STI, the electrons generated by impact ionization at the corners of the HVNW can be easily trapped in the nitride layer or at the liner oxide/nitride layer interface. Furthermore, the extension of electron trapping in STI from drain to source during HCS forms the OFF-current conductive path. Based on the charge pumping measurements at different operation conditions, this path formation is further demonstrated by the comparisons of charge pumping measurements between initial state and after HCS.
URI: http://dx.doi.org/10.1109/LED.2014.2316316
http://hdl.handle.net/11536/24699
ISSN: 0741-3106
DOI: 10.1109/LED.2014.2316316
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 6
起始頁: 651
結束頁: 653
顯示於類別:期刊論文


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  1. 000337136900015.pdf