標題: Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
作者: Zhang, Rui
Chang, Kuan-Chang
Chang, Ting-Chang
Tsai, Tsung-Ming
Huang, Syuan-Yong
Chen, Wen-Jen
Chen, Kai-Huang
Lou, Jen-Chung
Chen, Jung-Hui
Young, Tai-Fa
Chen, Min-Chen
Chen, Hsin-Lu
Liang, Shu-Ping
Syu, Yong-En
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Oxygen accumulation;indium tin oxide;Schottky emission;RRAM
公開日期: 1-六月-2014
摘要: In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide (Gd:SiO2) resistance random access memory (RRAM). We find that oxygen absorbance by indium-tin-oxide electrode affects the conduction current mechanism, and remarkably modifies the device performance of RRAM devices. By current fitting, Schottky emission can be observed in both low and high resistance states, from which conduction model is proposed to clarify the oxygen accumulation phenomenon. Reliability tests, including endurance and high temperature retention are further carried out, evaluating the significance of oxygen accumulation effect in redox reaction for RRAM devices.
URI: http://dx.doi.org/10.1109/LED.2014.2316806
http://hdl.handle.net/11536/24697
ISSN: 0741-3106
DOI: 10.1109/LED.2014.2316806
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 6
起始頁: 630
結束頁: 632
顯示於類別:期刊論文


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