標題: Gold-free fully cu-metallized InGaP/GaAs heterojunction bipolar transistor
作者: Chang, SW
Chang, EY
Biswas, D
Lee, CS
Chen, KS
Tseng, CW
Hsieh, TL
Wu, WC
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: copper;GaAs;HBT;metallization;diffusion barrier
公開日期: 1-一月-2005
摘要: A gold-free, fully Cu-metallized InGaP/GaAs heterejunction bipolar transistor using platinum as the diffusion barrier has been successfully fabricated. The HBT uses Pd/Ge and Pt/Ti/Pt/Cu for n-type and p(+)-type ohmic contacts, respectively, and Ti/Pt/Cu for interconnect metals with platinum as the diffusion barrier. The Ti/Pt/Cu structure was stable during annealing up to 350degreesC judging from the X-ray diffraction (XRD) data and sheet resistance. A current-accelerated stress test was conducted on the device with a current density J(C) = 140 kA/cm(2) for 24 h, and the current gain showed no degradation. The devices were also thermally annealed at 250degreesC,for 24 h and showed little change. We have successfully demonstrated that an Au-free, fully Cu-metallized HBT can be realized using Pt as the diffusion barrier and Pd/Ge and Pt/Ti/Pt/Cu as the ohmic contacts.
URI: http://dx.doi.org/10.1143/JJAP.44.8
http://hdl.handle.net/11536/24691
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.8
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 1A
起始頁: 8
結束頁: 11
顯示於類別:期刊論文


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  1. 000226996600003.pdf