標題: Investigating electron depletion effect in amorphous indium-gallium-zinc-oxide thin-film transistor with a floating capping metal by technology computer-aided design simulation and leakage reduction
作者: Lu, Ting-Chou
Chen, Wei-Tsung
Zan, Hsiao-Wen
Ker, Ming-Dou
電機學院
光電工程學系
College of Electrical and Computer Engineering
Department of Photonics
公開日期: 1-Jun-2014
摘要: The electron distribution in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with a floating metal-semiconductor (MS) back interface is analyzed using a technology computer-aided design (TCAD) model. The channel geometry (i.e., length and thickness) effect is carefully investigated. At a high work function (i.e., 5 eV) of the capping metal, electrons inside a-IGZO are mostly removed by the capping metal (electron depletion effect). The depletion of the IGZO film leads to an increase in threshold voltage in a-IGZO TFT. TCAD simulation reveals that increasing channel length and decreasing IGZO thickness significantly enhance such an electron depletion effect. Finally, the electron depletion effect is applied to a-IGZO TFT with a high-conductivity IGZO film to greatly suppress the leakage current by over 5 orders. (C) 2014 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.53.064302
http://hdl.handle.net/11536/24668
ISSN: 0021-4922
DOI: 10.7567/JJAP.53.064302
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 53
Issue: 6
結束頁: 
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