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dc.contributor.authorLiu, Shiu-Jenen_US
dc.contributor.authorFang, Hau-Weien_US
dc.contributor.authorSu, Yu-Taien_US
dc.contributor.authorHsieh, Jang-Hsingen_US
dc.date.accessioned2014-12-08T15:36:20Z-
dc.date.available2014-12-08T15:36:20Z-
dc.date.issued2014-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.53.063201en_US
dc.identifier.urihttp://hdl.handle.net/11536/24667-
dc.description.abstractMo- and Mn-doped VO2 thin films have been grown on c-cut sapphire substrates by the magnetron co-sputtering technique. The effects of Mo and Mn doping on the structure and metal-insulator transition of the doped VO2 thin films were studied. An enlargement of the out-of-plane lattice constant of the film caused by Mo doping was observed. As expected, the transition temperature (T-MI) is reduced by Mo doping. However, the valence of the Mo ions doped in the VO2 films is determined by X-ray photoelectron spectroscopy to be 6+ on the surface, but 4+ and 3+ in the bulk part of the films. The reduction in T-MI observed in this study is attributed to the variation in the band structure resulting from the incorporation of Mo4+ into the VO2 lattice. The optical transmission is remarkably enhanced by low-concentration Mo doping and then monotonically decreases with increasing Mo content. On the other hand, the out-of-plane lattice constant and T-MI are not affected by Mn doping. The transmission is enhanced and then monotonically increases with increasing Mn concentration. The thermochromism of doped films is suppressed by Mo and Mn doping. (C) 2014 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleMetal-insulator transition characteristics of Mo- and Mn-doped VO2 films fabricated by magnetron cosputtering techniqueen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/JJAP.53.063201en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume53en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000338104600024-
dc.citation.woscount0-
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