標題: Electrical characteristics of Ni Ohmic contact on n-type GeSn
作者: Li, H.
Cheng, H. H.
Lee, L. C.
Lee, C. P.
Su, L. H.
Suen, Y. W.
奈米科技中心
Center for Nanoscience and Technology
公開日期: 16-六月-2014
摘要: We report an investigation of the electrical and material characteristics of Ni on an n-type GeSn film under thermal annealing. The current-voltage traces measured with the transmission line method are linear for a wide range of annealing temperatures. The specific contact resistivity was found to decrease with increasing annealing temperature, followed by an increase as the annealing temperature further increased, with a minimum value at an annealing temperature of 350 degrees C. The material characteristics at the interface layer were measured by energy-dispersive spectrometer, showing that an atomic ratio of (Ni)/(GeSn) = 1:1 yields the lowest specific contact resistivity. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4883748
http://hdl.handle.net/11536/24642
ISSN: 0003-6951
DOI: 10.1063/1.4883748
期刊: APPLIED PHYSICS LETTERS
Volume: 104
Issue: 24
結束頁: 
顯示於類別:期刊論文


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