標題: Spatial Correlation Between Efficiency and Crystal Structure in GaN-Based Light-Emitting Diodes Prepared on High-Aspect Ratio Patterned Sapphire Substrate With Sputtered AlN Nucleation Layer
作者: Chang, Li-Chuan
Chen, Yu-An
Kuo, Cheng-Huang
照明與能源光電研究所
Institute of Lighting and Energy Photonics
關鍵字: AlN;GaN;light-emitting diodes (LEDs);nucleation;patterned sapphire substrate (PSS);physical vapor deposition (PVD)
公開日期: 1-Jul-2014
摘要: In this paper, we investigate sputtered physical vapor deposition (PVD) AlN nucleation layer effects on crystal quality and efficiency of GaN-based light-emitting diodes (LEDs) prepared on high-aspect ratio patterned sapphire substrate (HARPSS). The crystal quality of the GaN epitaxial layer prepared on HARPSS with a PVD AlN nucleation layer was significantly better than that with a conventional metal organic chemical vapor deposition (MOCVD)-grown AlN nucleation layer. In addition, the pure wurzite structure GaN prepared on HARPSS could be obtained using PVD AlN nucleation layer. With the PVD AlN nucleation layer, the 20-mA LED light output power of the LEDs can be enhanced by 47.7% compared with the LEDs with the conventional MOCVD-grown AlN nucleation layer.
URI: http://dx.doi.org/10.1109/TED.2014.2325411
http://hdl.handle.net/11536/24623
ISSN: 0018-9383
DOI: 10.1109/TED.2014.2325411
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 61
Issue: 7
起始頁: 2443
結束頁: 2447
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