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dc.contributor.authorShieh, Chen-Yuen_US
dc.contributor.authorTsai, Ming-Taen_US
dc.contributor.authorLi, Zhen-Yuen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorChang, Jeng-Yangen_US
dc.contributor.authorChi, Gou-Chungen_US
dc.contributor.authorLee, Wei-Ien_US
dc.date.accessioned2014-12-08T15:36:17Z-
dc.date.available2014-12-08T15:36:17Z-
dc.date.issued2014-07-07en_US
dc.identifier.issn1934-2608en_US
dc.identifier.urihttp://dx.doi.org/10.1117/1.JNP.8.083081en_US
dc.identifier.urihttp://hdl.handle.net/11536/24612-
dc.description.abstractWe investigated the influence of free-standing GaN (FS-GaN) substrates on the performance of ultraviolet light-emitting-diodes (UV-LEDs) grown on top by atmospheric pressure metal-organic chemical vapor deposition. High-resolution double-crystal x-ray diffraction (HRDCXD) analysis demonstrated high-order satellite peaks and clear fringes between them for UV-LEDs grown on the FS-GaN substrate, from which the interface roughness was estimated. In addition, the full width at half maximum of the HRDCXD rocking curve in the (0002) and the (1012) reflections were reduced to below 90 arc sec. The Raman results indicated that the GaN-based epilayer of strain free was grown. Additionally, the effect of the FS-GaN substrate on the crystal quality of the UV-LEDs was examined in detail by transmission electron microscopy (TEM). The TEM characterizations revealed no defects and V-pits were found in the scanned area. Based on the results mentioned above, the light output power of UV-LEDs on the FS-GaN substrate can be enhanced drastically by 80% and 90% at 20 and 100 mA, respectively. Furthermore, an ultralow efficiency degradation of about 3% can be obtained for the UV-LEDs on the FS-GaN substrate at a high injection current. The use of an FS-GaN substrate is suggested to be effective for improving the emission efficiency and droop of UV-LEDs grown thereon.en_US
dc.language.isoen_USen_US
dc.subjectfree-standing GaN substrateen_US
dc.subjectultraviolet light-emitting-diodesen_US
dc.subjectatmospheric pressure metal-organic chemical vapor depositionen_US
dc.subjecthigh-resolution double crystal x-ray diffractionen_US
dc.subjecttransmission electron microscopyen_US
dc.subjectlight output poweren_US
dc.subjectefficiency droopen_US
dc.titleHigh performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1117/1.JNP.8.083081en_US
dc.identifier.journalJOURNAL OF NANOPHOTONICSen_US
dc.citation.volume8en_US
dc.citation.issueen_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000338490900001-
dc.citation.woscount0-
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