標題: Chemical mechanical polishing for selective CVD-W
作者: Wang, MT
Yeh, WK
Tsai, MS
Tseng, WT
Chang, TC
Chen, LJ
Chen, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: selective tungsten chemical vapor deposition;chemical mechanical polishing;removal rate selectivity
公開日期: 30-十月-1997
摘要: This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
URI: http://hdl.handle.net/11536/246
ISSN: 0254-0584
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 51
Issue: 1
起始頁: 75
結束頁: 79
顯示於類別:期刊論文


文件中的檔案:

  1. A1997YB63700014.pdf