標題: Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs
作者: Sheu, YM
Yang, SJ
Wang, CC
Chang, CS
Huang, LP
Huang, TY
Chen, MJ
Diaz, CH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: dopant diffusion;mechanical stress;modeling;MOSFET;shallow trench isolation (STI);simulation;strain
公開日期: 1-一月-2005
摘要: The effect of shallow trench isolation mechanical stress on MOSFET dopant diffusion has become significant, and affects device behavior for sub-100-nm technologies. This paper presents a stress-dependent dopant diffusion model and demonstrates its capability to reflect experimental results for a state-of-the-art logic CMOS technology. The proposed stress-dependent dopant diffusion model is shown to successfully reproduce device characteristics covering a wide range of active area sizes, gate lengths, and device operating conditions.
URI: http://dx.doi.org/10.1109/TED.2004.841286
http://hdl.handle.net/11536/24580
ISSN: 0018-9383
DOI: 10.1109/TED.2004.841286
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 52
Issue: 1
起始頁: 30
結束頁: 38
顯示於類別:期刊論文


文件中的檔案:

  1. 000225915000006.pdf