標題: EFFECT OF SPUTTERING POWER ON THE STRUCTURAL AND OPTICAL-PROPERTIES OF RF MAGNETRON-SPUTTERED ITO FILMS
作者: WU, WF
CHIOU, BS
HSIEH, ST
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jun-1994
摘要: The structural and optical properties of RF magnetron sputtered ITO films without in situ substrate heating and post-deposition annealing are investigated. The structure and orientation of ITO films strongly depends on the energy of the sputtered particles arriving at the substrate. As the sputtering power increases from 15 to 100 W, the preferred orientation of the ITC) film changes from (222) to (400). It is observed that the lattice constant of the film increases initially as sputtering power increases from 15 to 50 W and then decreases with further increase of sputtering power. The higher the sputtering power, the smaller the oxygen content of the film. The oxygen deficiency is used to explain the loss of transmittance or blackening of ITO films deposited at high sputtering power. Several material parameters, such as optical constants and energy gap, have been derived and discussed. The figure of merit of the films ranges from 81.3 to 117.6 OMEGA-1.
URI: http://dx.doi.org/10.1088/0268-1242/9/6/014
http://hdl.handle.net/11536/2458
ISSN: 0268-1242
DOI: 10.1088/0268-1242/9/6/014
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 9
Issue: 6
起始頁: 1242
結束頁: 1249
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  1. A1994NQ79100014.pdf