標題: Erbium-Doped Amorphous Carbon-Based Thin Films: A Photonic Material Prepared by Low-Temperature RF-PEMOCVD
作者: Hsu, Hui-Lin
Leong, Keith R.
Teng, I-Ju
Halamicek, Michael
Juang, Jenh-Yih
Jian, Sheng-Rui
Qian, Li
Kherani, Nazir P.
電子物理學系
Department of Electrophysics
關鍵字: RF-PEMOCVD;erbium metal-organic compound;deuterated amorphous carbon (a-C:D);fluorination
公開日期: 1-三月-2014
摘要: The integration of photonic materials into CMOS processing involves the use of new materials. A simple one-step metal-organic radio frequency plasma enhanced chemical vapor deposition system (RF-PEMOCVD) was deployed to grow erbium-doped amorphous carbon thin films (a-C:(Er)) on Si substrates at low temperatures (<200 degrees C). A partially fluorinated metal-organic compound, tris(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionate) Erbium(+III) or abbreviated Er(fod)(3), was incorporated in situ into a-C based host. Six-fold enhancement of Er room-temperature photoluminescence at 1.54 mu m was demonstrated by deuteration of the a-C host. Furthermore, the effect of RF power and substrate temperature on the photoluminescence of a-C:D(Er) films was investigated and analyzed in terms of the film structure. Photoluminescence signal increases with increasing RF power, which is the result of an increase in [O]/[Er] ratio and the respective erbium-oxygen coordination number. Moreover, photoluminescence intensity decreases with increasing substrate temperature, which is attributed to an increased desorption rate or a lower sticking coefficient of the fluorinated fragments during film growth and hence [Er] decreases. In addition, it is observed that Er concentration quenching begins at similar to 2.2 at% and continues to increase until 5.5 at% in the studied a-C: D(Er) matrix. This technique provides the capability of doping Er in a vertically uniform profile.
URI: http://dx.doi.org/10.3390/ma7031539
http://hdl.handle.net/11536/24500
ISSN: 1996-1944
DOI: 10.3390/ma7031539
期刊: MATERIALS
Volume: 7
Issue: 3
起始頁: 1539
結束頁: 1554
顯示於類別:期刊論文


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