標題: Natural substrate lift-off technique for vertical light-emitting diodes
作者: Lee, Chia-Yu
Lan, Yu-Pin
Tu, Po-Min
Hsu, Shih-Chieh
Lin, Chien-Chung
Kuo, Hao-Chung
Chi, Gou-Chung
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 1-四月-2014
摘要: Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical light-emitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to.1 x 10(8) cm(-2). Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved. (C) 2014 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.7.042103
http://hdl.handle.net/11536/24486
ISSN: 1882-0778
DOI: 10.7567/APEX.7.042103
期刊: APPLIED PHYSICS EXPRESS
Volume: 7
Issue: 4
結束頁: 
顯示於類別:期刊論文


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  1. 000336118100010.pdf