標題: Dark current suppression of amorphous selenium based photosensors by the ZnO hole blocking layer
作者: Yu, Tung-Yuan
Pan, Fu-Ming
Chang, Cheng-Yi
Hu, Tien
Chen, Jenn-Fang
Wang, Jia-Feng
Lin, Cheng-Lu
Chen, Tsung-Han
Chen, Te-Ming
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: Zinc oxide;Amorphous Se;Hole blocking layer;Oxygen vacancy;DLTS
公開日期: 1-五月-2014
摘要: To study the influence of defects in the hole blocking layer (HBL) on the dark current of amorphous selenium (a-Se) based photosensors, we prepared ZnO thin films by reactive sputter deposition (RSD) for the use as the HBL of the photosensors. The ZnO HBL layers prepared with different oxygen flow rates were characterized by X-ray photoelectron spectroscopy, Raman scattering analysis and photoluminescence, indicating that the density of oxygen vacancies in the ZnO thin films is significantly affected by the oxygen flow rate. The deep level transient spectroscopy measurement reveals two hole trap levels present in the RSD deposited ZnO thin films; one is at 0.94 eV and the other at 0.24 eV above the valence band edge. The electrical performance of the a-Se photosensor is largely influenced by the amount of oxygen vacancies in the ZnO thin film. The a-Se photosensor with the ZnO HBL of the most oxygen vacancies has the lowest dark current and demonstrates the highest breakdown field. (C) 2014 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.cap.2014.02.011
http://hdl.handle.net/11536/24457
ISSN: 1567-1739
DOI: 10.1016/j.cap.2014.02.011
期刊: CURRENT APPLIED PHYSICS
Volume: 14
Issue: 5
起始頁: 659
結束頁: 664
顯示於類別:期刊論文


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