標題: Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effect
作者: Zheng, Zhi-Wei
Hsu, Hsiao-Hsuan
Cheng, Chun-Hu
Chen, Po-Chun
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: resistive random access memories;Y2O3;TiOy;carrier depletion;resisitive switching
公開日期: 1-五月-2014
摘要: We report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high-temperature switching characteristics of extremely low reset current of 1 A at 150 degrees C, large off/on resistance window (>200) at 150 degrees C, large rectification ratio of approximate to 300 at 150 degrees C and good current distribution at 85 degrees C. The good rectifying property, lower high-temperature sneak current and tighter high-temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
URI: http://dx.doi.org/10.1002/pssr.201409039
http://hdl.handle.net/11536/24451
ISSN: 1862-6254
DOI: 10.1002/pssr.201409039
期刊: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume: 8
Issue: 5
起始頁: 431
結束頁: 435
顯示於類別:期刊論文


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  1. 000336495000012.pdf