標題: 77-110 GHz 65-nm CMOS Power Amplifier Design
作者: Wu, Kun-Long
Lai, Kuan-Ting
Hu, Robert
Jou, Christina F.
Niu, Dow-Chih
Shiao, Yu-Shao
電機工程學系
Department of Electrical and Computer Engineering
關鍵字: CMOS;impedance transformation;millimeter-wave;power amplifier;power combining;wideband
公開日期: 1-五月-2014
摘要: This paper details the development of our millimeter-wave wideband power amplifier design. By treating the power combiner as an impedance transformer which allows different loading impedance to be taken into account, a compact wideband power-combining network can be constructed. With small transmission-line attenuation being sustained and maximum output power easily extracted from the transistors over the 77-110 GHz frequency range, a power amplifier can then be designed using 65-nm CMOS process to cover the whole W-band. In the on-wafer measurement, the gain is around 18 dB, the output reflection coefficients is below -10 dB, and the output-referred 1 dB compression point can reach 12 dBm at 1.2 V bias condition; when the bias is increased to 2.5 V, a 18 dBm output power is recorded. To our knowledge, this is the first CMOS power amplifier that covers the whole W-band.
URI: http://dx.doi.org/10.1109/TTHZ.2014.2315451
http://hdl.handle.net/11536/24444
ISSN: 2156-342X
DOI: 10.1109/TTHZ.2014.2315451
期刊: IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY
Volume: 4
Issue: 3
起始頁: 391
結束頁: 399
顯示於類別:期刊論文


文件中的檔案:

  1. 000336223000014.pdf