標題: Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates
作者: Hsiao, Yu-Lin
Chang, Chia-Ao
Chang, Edward Yi
Maa, Jer-Shen
Chang, Chia-Ta
Wang, Yi-Jie
Weng, You-Chen
材料科學與工程學系
光電系統研究所
Department of Materials Science and Engineering
Institute of Photonic System
公開日期: 1-May-2014
摘要: An Al0.2Ga0.8N/GaN/Al0.1Ga0.9N double-heterostructure field effect transistor (DH-FET) structure was grown on a 150-mm-diameter Si substrate and the crystalline quality of the epitaxial material was found to be comparable to that of an Al0.2Ga0.8N/GaN single-heterostructure field effect transistor (SH-FET) structure. The fabricated DH-FET shows a lower buffer leakage current of 9.2 x 10(-5) mA/mm and an improved off-state breakdown voltage of higher than 200V, whereas the SH-FET shows a much higher buffer leakage current of 6.0 x 10(-3) mA/mm and a lower breakdown voltage of 130 V. These significant improvements show that the Al0.2Ga0.8N/GaN/Al0.1Ga0.9N DH-FET is an effective structure for high-power electronic applications. (C) 2014 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.7.055501
http://hdl.handle.net/11536/24433
ISSN: 1882-0778
DOI: 10.7567/APEX.7.055501
期刊: APPLIED PHYSICS EXPRESS
Volume: 7
Issue: 5
結束頁: 
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