標題: Field effect of in-plane gates with different gap sizes on the Fermi level tuning of graphene channels
作者: Lin, Meng-Yu
Chen, Yen-Hao
Wang, Cheng-Hung
Su, Chen-Fung
Chang, Shu-Wei
Lee, Si-Chen
Lin, Shih-Yen
光電學院
光電工程學系
顯示科技研究所
College of Photonics
Department of Photonics
Institute of Display
公開日期: 5-五月-2014
摘要: Tuning of the Fermi level is investigated in graphene channels using two in-plane gates with significantly different-sized isolating gaps. While the n-type tuning was achievable in both schemes, the wide-gap device had an enhanced minimum drain current and less prominent current modulation than the narrow-gap device. In addition, further p-type tuning was not observed in the wide-gap device at negative gate biases. These phenomena indicated that both devices had distinct field-strength dependences and Fermi level tuning effects, which may be critical for the practical design of devices. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4875583
http://hdl.handle.net/11536/24431
ISSN: 0003-6951
DOI: 10.1063/1.4875583
期刊: APPLIED PHYSICS LETTERS
Volume: 104
Issue: 18
結束頁: 
顯示於類別:期刊論文


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  1. 000336249600067.pdf