標題: High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability
作者: Yang, Weihuang
Li, Jinchai
Zhang, Yong
Huang, Po-Kai
Lu, Tien-Chang
Kuo, Hao-Chung
Li, Shuping
Yang, Xu
Chen, Hangyang
Liu, Dayi
Kang, Junyong
光電工程學系
Department of Photonics
公開日期: 5-Jun-2014
摘要: High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 x 10(9) cm(-2)) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs: nearly constant linewidth and emission energy, and linear dependence of the intensity with varying excitation power. More significantly, the radiative recombination was found to dominant from 15 to 300 K, with a high internal quantum efficiency of 62% even at room temperature.
URI: http://dx.doi.org/10.1038/srep05166
http://hdl.handle.net/11536/24396
ISSN: 2045-2322
DOI: 10.1038/srep05166
期刊: SCIENTIFIC REPORTS
Volume: 4
起始頁: 0
結束頁: 0
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