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dc.contributor.authorLin, Hung-Chengen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.date.accessioned2014-12-08T15:36:02Z-
dc.date.available2014-12-08T15:36:02Z-
dc.date.issued2014-07-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2014.04.007en_US
dc.identifier.urihttp://hdl.handle.net/11536/24390-
dc.description.abstractUnlike organic field-effect transistor with accumulated channel at dielectric/semiconductor interface, vertical organic transistor exhibits bulk channel current and hence performs good bias stress reliability. Adding self-assemble-monolayer to treat vertical channel can further modulate the charge-trapping surrounding the base electrode and hence influence the bias stress reliability. During 4300-s positive/negative bias stresses, stable output current and on/off ratio are demonstrated by using octadecyltrichlorosilane (OTS)-passivated vertical channel. The good reliability together with the low operation voltage and the high output current make vertical organic transistors capable of driving organic light emitting diode. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectBias stressen_US
dc.subjectSAMen_US
dc.subjectOrganic transistoren_US
dc.subjectOLED drivingen_US
dc.titleAchieving good bias stress reliability in organic transistor with vertical channelen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2014.04.007en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume15en_US
dc.citation.issue7en_US
dc.citation.spage1531en_US
dc.citation.epage1535en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department電機學院zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000336543500028-
dc.citation.woscount0-
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