標題: Achieving good bias stress reliability in organic transistor with vertical channel
作者: Lin, Hung-Cheng
Zan, Hsiao-Wen
Meng, Hsin-Fei
物理研究所
電機學院
光電工程學系
Institute of Physics
College of Electrical and Computer Engineering
Department of Photonics
關鍵字: Bias stress;SAM;Organic transistor;OLED driving
公開日期: 1-七月-2014
摘要: Unlike organic field-effect transistor with accumulated channel at dielectric/semiconductor interface, vertical organic transistor exhibits bulk channel current and hence performs good bias stress reliability. Adding self-assemble-monolayer to treat vertical channel can further modulate the charge-trapping surrounding the base electrode and hence influence the bias stress reliability. During 4300-s positive/negative bias stresses, stable output current and on/off ratio are demonstrated by using octadecyltrichlorosilane (OTS)-passivated vertical channel. The good reliability together with the low operation voltage and the high output current make vertical organic transistors capable of driving organic light emitting diode. (C) 2014 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2014.04.007
http://hdl.handle.net/11536/24390
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2014.04.007
期刊: ORGANIC ELECTRONICS
Volume: 15
Issue: 7
起始頁: 1531
結束頁: 1535
顯示於類別:期刊論文


文件中的檔案:

  1. 000336543500028.pdf