標題: NEW LARGE-ANGLE TILT IMPLANTED DRAIN STRUCTURE - SURFACE COUNTER-DOPED-LIGHTLY DOPED DRAIN FOR HIGH HOT-CARRIER RELIABILITY
作者: CHOU, JW
CHANG, CY
HUANG, C
HO, LT
KO, J
HSUE, P
電控工程研究所
奈米中心
Institute of Electrical and Control Engineering
Nano Facility Center
關鍵字: VLSI;HOT CARRIER EFFECT;LIGHTLY DOPED DRAIN (LDD);DRAIN ENGINEERING;OBLIQUE IMPLANTATION;SURFACE COUNTERDOPED-LDD (SCD-LDD)
公開日期: 1-七月-1994
摘要: A new surface counterdoped-lightly doped drain (SCD-LDD) structure with large angle tilt (LAT) implantation is proposed in this study. This structure introduces an additional larger tilt angle and lower-energy BF2 implant after the n- implant, which counterdopes the n- surface concentration to achieve a gate/n- fully overlapped, buried and sloped n- region inside the gate edge. As a result, the lateral electric fields inside the gate edge are reduced and pushed deeper into the substrate. In addition to a reduction in substrate current, this profile also suppresses hot carrier injection by driving the current away from the surface and the maximum electric field; then it shifts the avalanche region further into the bulk Si. This consequently produces a more effective enhancement of hot carrier reliability than that of conventional LDD's and controlled large-angle-tilt implanted drains (LATID's) for submicron VLSI circuits under 5 V operation. In conclusion, this SCD-LDD provides one more degree of freedom in optimizing the n- region doping profiles as a new LATID structure.
URI: http://dx.doi.org/10.1143/JJAP.33.3864
http://hdl.handle.net/11536/2439
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.3864
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 33
Issue: 7A
起始頁: 3864
結束頁: 3872
顯示於類別:期刊論文


文件中的檔案:

  1. A1994PE44700011.pdf