標題: Numerical Analysis on Current and Optical Confinement of III-Nitride Vertical-Cavity Surface-Emitting Lasers
作者: Lai, Ying-Yu
Lu, Tien-Chang
Ho, Tsung-Lin
Huang, Shen-Che
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: III-nitride;VCSELs;ITO;Buried AlN current apertures;current crowding;lateral index guiding
公開日期: 2014
摘要: We report on the numerical analysis of the electrical and optical properties of current-injected III-N based vertical-cavity surface-emitting lasers (VCSELs) with three types of current confinement schemes: the conventional planar-Indium Tin Oxide (ITO) type, the AlN-buried type without ITO, and the hybrid type. The proposed hybrid structure, which combines an ITO layer and an intracavity AlN aperture, exhibits not only a uniform current distribution but also an enhanced lateral optical confinement. Thus, the hybrid type design shows a remarkably better performance including lower threshold current and series resistance compared with the planar-ITO type and the AlN-buried type. Furthermore, the multi-transverse mode lasing behavior induced by strong index guiding of the AlN aperture is suppressed to single transverse mode operation by reducing the aperture size. Such design provides a powerful solution for the high performance III-N based VCSELs and is also viable by using current state of the art processing techniques.
URI: http://hdl.handle.net/11536/24360
http://dx.doi.org/10.1117/12.2038448
ISBN: 978-0-8194-9914-1
ISSN: 0277-786X
DOI: 10.1117/12.2038448
期刊: VERTICAL-CAVITY SURFACE-EMITTING LASERS XVIII
Volume: 9001
Appears in Collections:Conferences Paper


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