標題: Experimental Demonstration of (111)-Oriented GaAs Metal-Oxide-Semiconductor Field-Effect-Transistors with Hetero-Epitaxial Ge Source/Drain
作者: Han, Tsung-Yu
Luo, Guang-Li
Cheng, Chao-Ching
Ko, Chih-Hsin
Wann, Clement H.
Kei, Chi-Chung
Hsiao, Chien-Nan
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2014
摘要: We demonstrate source/drain (S/D) design for GaAs n-type metal-oxide-semiconductor field-effect transistor (NMOSFET) by embedding Ge into recessed S/D region to eliminate the intrinsic issues of the low solid solubility of dopants and low density of states (DOS) in GaAs material. For achieving high quality S/D epitaxy, the effects of substrate orientation and surface preparation on the quality of the epitaxial Ge film were investigated. High quality Ge film was successfully grown on the GaAs (111)A substrate by using a ultra high vacuum chemical vapor deposition (UHVCVD) tool and the significant improvement in the surface root-mean-square (RMS) roughness was observed as compared to that on the (100) substrate. The fabricated GaAs NMOSFET with hetero-Ge S/D exhibits an I-on/I-off ratio of similar to 2.5 x 10(2). Even though the performance can be further improved, we think our proposed scheme sheds the light on overcoming the issues of the low solid solubility of n-dopant and low DOS in III-V MOSFETs. (C) 2014 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/24336
http://dx.doi.org/10.1149/2.016404jss
ISSN: 2162-8769
DOI: 10.1149/2.016404jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 3
Issue: 4
起始頁: P86
結束頁: P90
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