標題: Characterization of Ultra-Thin Ni Silicide Film by Two-Step Low Temperature Microwave Anneal
作者: Wu, Chien-Ting
Lee, Yao-Jen
Hsueh, Fu-Kuo
Sung, Po-Jung
Cho, Ta-Chun
Current, Michael Ira
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
公開日期: 2014
摘要: A novel silicide process with two-step low temperature microwave annealing (MWA) achieves NiSi thickness of 10 nm while maintaining low resistance, and an ultra-thin Ni silicide film, only 4.5 nm, has been realized. In this MWA system, we insert quartz and Si susceptors to change the absorption efficiency of the process wafer and provide fine turning in temperature control during annealing. The thickness of NiSi film is determined by microwave power and by changing the number and the position of quartz and Si susceptors in the first step of the anneal process. The STEM-HAADF combined EELS/EDS spectroscopies are used to analyze the electronic excitations and identify the phase of Ni silicide. (C) 2014 The Electrochemical Society. [DOI: 10.1149/2.006405jss] All rights reserved.
URI: http://hdl.handle.net/11536/24329
http://dx.doi.org/10.1149/2.006405jss
ISSN: 2162-8769
DOI: 10.1149/2.006405jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 3
Issue: 5
起始頁: P122
結束頁: P125
顯示於類別:期刊論文


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