標題: Characterization of TiN film grown by low-pressure-chemical-vapor-deposition
作者: Mei, YJ
Chang, TC
Hu, JC
Chen, LJ
Yang, YL
Pan, FM
Wu, WF
Ting, A
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: TiN film;low-pressure-chemical-vapour-deposition
公開日期: 31-Oct-1997
摘要: Conformal TiN films were deposited by thermal low-pressure-chemical-vapor-deposition (LPCVD) in a rotating disk reactor, using TiCl4 and NH3 with N-2 as a dilution gas. TiN plug with 0.05 mu m contact size was achieved. No void formation was observed in the TiN plug. The result demonstrated that LPCVD-TiN can be used to fill very small contact holes. The excellent step coverage and uniformity resulted from a surface-reaction-rate-limited deposition. The resistivity of TiN film was reduced to 133 mu Omega cm by in-situ NH3 plasma post-treatment. The concentration of chlorine in the TiN him was measured to be less than 2 atomic % (at.%) by Auger electron spectroscope measurement. For Al deposited on TiN, the Al orientation was found to be dependent on the deposition method of Al film, but not on the underlying TiN orientation. (C) 1997 Elsevier Science S.A.
URI: http://dx.doi.org/10.1016/S0040-6090(97)00493-8
http://hdl.handle.net/11536/243
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(97)00493-8
期刊: THIN SOLID FILMS
Volume: 308
Issue: 
起始頁: 594
結束頁: 598
Appears in Collections:Conferences Paper


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