標題: On the Design of Power-Rail ESD Clamp Circuits With Gate Leakage Consideration in Nanoscale CMOS Technology
作者: Ker, Ming-Dou
Yeh, Chih-Ting
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electrostatic discharge (ESD);gate leakage;layout area;power-rail ESD clamp circuit
公開日期: 1-三月-2014
摘要: CMOS technology has been widely used to produce many integrated circuits. However, the thinner gate oxide in nanoscale CMOS technology seriously increases the difficulty of electrostatic discharge (ESD) protection design. The power-rail ESD clamp circuit has been the key circuit to perform the whole-chip ESD protection scheme. Some ESD detection circuits were developed to trigger on ESD devices across the power rails to quickly discharge ESD current away from the internal circuits. Therefore, on-chip ESD protection circuits must be designed with the consideration of standby leakage to minimize the power consumption and the possibility of malfunction to normal circuit operation. The design of power-rail ESD clamp circuits with low standby leakage current and high efficiency of layout area in nanoscale CMOS technology is reviewed in this paper. The comparisons among those power-rail ESD clamp circuits are also discussed.
URI: http://dx.doi.org/10.1109/TDMR.2013.2280044
http://hdl.handle.net/11536/24295
ISSN: 1530-4388
DOI: 10.1109/TDMR.2013.2280044
期刊: IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
Volume: 14
Issue: 1
起始頁: 536
結束頁: 544
顯示於類別:期刊論文


文件中的檔案:

  1. 000335226600071.pdf