標題: Optical properties associated with strain relaxations in thick InGaN epitaxial films
作者: Tsai, Wen-Che
Hsu, Chia-He
Fu, Shao-Fu
Lee, Fang-Wei
Chen, Chin-Yu
Chou, Wu-Ching
Chen, Wei-Kuo
Chang, Wen-Hao
電子物理學系
Department of Electrophysics
公開日期: 10-三月-2014
摘要: Structural and optical properties of thick InGaN layers with strain and composition inhomogeneities are investigated. High resolution x-ray diffractions (XRD) and reciprocal space mapping (RSM) along an asymmetric axis reveal that the In composition inhomogeneity is accompanied by strain relaxations during the growth of thick InGaN layers. According to the structural analysis, the commonly observed double photoluminescence (PL) peaks have been confirmed to be associated with the strain relaxation in thick InGaN films. Temperature-dependent PL measurements further indicate that the relaxed phase in InGaN films exhibits better emission efficiency than the strained phase. Recombination dynamics reveal that the carrier localization effect is more pronounced in the relaxed phase due to the compositional pulling effect. The correlations between emission efficiency and localization effect in thick InGaN films are discussed. (C)2014 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.22.00A416
http://hdl.handle.net/11536/24291
ISSN: 1094-4087
DOI: 10.1364/OE.22.00A416
期刊: OPTICS EXPRESS
Volume: 22
Issue: 5
起始頁: A416
結束頁: A424
顯示於類別:期刊論文


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