標題: DIELECTRICS DEGRADATION OF ALPHA-SI/CO/SIO2/SI STRUCTURE DURING FURNACE ANNEALING
作者: CHEN, BS
CHEN, MC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jul-1994
摘要: The dielectric properties, which are highlighted on electrical characteristics, of alpha-Si/CO/SiO2/Si Structure after thermal annealing have been studied. A one-step high temperature (greater-than-or-equal-to 700-degrees-C) annealing process is found to deteriorate considerably the characteristics of the masking oxide. The tetraethylorthosilicate oxide needs a high-temperature preanneal prior to the self-aligned silicided (SALICIDE) process in order to prevent crack and pit formation and severe electrical degradation during silicidation annealing. A two-step annealing process with the first annealing performed at 550-degrees-C for 30 min has proved to be a trustworthy salicide process without affecting the dielectric properties of masking oxide.
URI: http://hdl.handle.net/11536/2429
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 141
Issue: 7
起始頁: 1931
結束頁: 1937
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  1. A1994NX19600045.pdf