標題: GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer
作者: Lai, Wei-Chih
Lin, Chih-Nan
Lai, Yi-Chun
Yu, Peichen
Chi, Gou Chung
Chang, Shoou-Jinn
光電工程學系
Department of Photonics
公開日期: 10-三月-2014
摘要: We have demonstrated a gallium nitride (GaN)-based green light-emitting diode (LED) with graphene/indium tin oxide (ITO) transparent contact. The ohmic characteristic of the p-GaN and graphene/ITO contact could be preformed by annealing at 500 degrees C for 5 min. The specific contact resistance of p-GaN/graphene/ITO (3.72E-3 Omega(center dot)cm(2)) is one order less than that of p-GaN/ITO. In addition, the 20-mA forward voltage of LEDs with graphene/ITO transparent (3.05 V) is 0.09 V lower than that of ITO LEDs (3.14 V). Besides, We have got an output power enhancement of 11% on LEDs with graphene/ITO transparent contact. (C)2014 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.22.00A396
http://hdl.handle.net/11536/24288
ISSN: 1094-4087
DOI: 10.1364/OE.22.00A396
期刊: OPTICS EXPRESS
Volume: 22
Issue: 5
起始頁: A396
結束頁: A401
顯示於類別:期刊論文


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