標題: Opto-electrical properties of Sb-doped p-type ZnO nanowires
作者: Kao, Tzu-Hsuan
Chen, Jui-Yuan
Chiu, Chung-Hua
Huang, Chun-Wei
Wu, Wen-Wei
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 17-三月-2014
摘要: P-type ZnO nanowires (NWs) have attracted much attention in the past years due to the potential applications for optoelectronics and piezotronics. In this study, we have synthesized Sb-doped p-type ZnO NWs on Si (100) substrates by chemical vapor deposition with Aucatalyst. The Sb-doped ZnO NWs are single crystalline with high density, grown along [1-1-2] direction. The doping percentage of Sb is about 2.49%, which has been confirmed by X-ray photoelectron spectroscopy. The ZnO NW field effect transistor demonstrated its p-type characteristics. A high responsivity to ultraviolet photodetection was also observed. In addition, compared to intrinsic ZnO NWs, the conductivity of the Sb-doped ZnO NWs exhibited similar to 2 orders of magnitude higher. These properties make the p-type ZnO NWs a promising candidate for electronic and optoelectronic devices. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4869355
http://hdl.handle.net/11536/24285
ISSN: 0003-6951
DOI: 10.1063/1.4869355
期刊: APPLIED PHYSICS LETTERS
Volume: 104
Issue: 11
結束頁: 
顯示於類別:期刊論文


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