標題: Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement
作者: Ho, Szu-Han
Chang, Ting-Chang
Lu, Ying-Hsin
Chen, Ching-En
Tsai, Jyun-Yu
Liu, Kuan-Ju
Tseng, Tseung-Yuen
Cheng, Osbert
Huang, Cheng-Tung
Lu, Ching-Sen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 17-三月-2014
摘要: This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO2 n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (V-t) shifts positively during fast I-V double sweep measurement. However, in I/O devices, V-t shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting HfxZr1-xO2 as gate oxide, can reduce the charge/discharge effect. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4868532
http://hdl.handle.net/11536/24284
ISSN: 0003-6951
DOI: 10.1063/1.4868532
期刊: APPLIED PHYSICS LETTERS
Volume: 104
Issue: 11
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000333252300074.pdf