標題: Root growth of multi-wall carbon nanotubes by MPCVD
作者: Hsu, CM
Lin, CH
Lai, HJ
Kuo, CT
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: nanostructures;growth mechanism;carbon;plasma processing and deposition
公開日期: 3-Jan-2005
摘要: This work examines the relationships among the growth and interlayer reactions of carbon nanotubes (CNTs) to develop an effective process for controlling the nanostructure, orientation and characteristics of CNTs. Vertically oriented CNTs were successfully synthesized by microwave plasma chemical vapor deposition (MPCVD) with CH4/H-2 as source gases. Additionally, the Ti and SiO2 barrier layers and the Co catalyst were used in an experiment on the growth of CNTs on the Si wafer. Then, the SiO2 barrier layer was deposited by low-pressure chemical vapor deposition (LPCVD). The Ti barrier layer and Co catalyst films were deposited on the Si wafer by physical vapor deposition (PVD). The deposited nanostructures were characterized by scanning and transmission electron microscopy, the results of which reveal that the deposited MWCNTs were grown under the influence of a catalyst on Si substrates with or without a barrier layer, by MPCVD. Vertically gown, dense MWCNTs attached to a catalytic film demonstrate that various MWCNTs penetrated the root particles. The diameter of the root particles, of approximately in the order of 100 nm, is larger than those of the tube, 10-15 nm. The well-known model of the growth of CNTs includes base- and tip-root growth. The interaction between the catalytic film and the supporting barrier layer is suggested to determine whether the catalytic particles are driven up or pinned down on the substrate during the growth. (C) 2004 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2004.05.004
http://hdl.handle.net/11536/24271
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2004.05.004
期刊: THIN SOLID FILMS
Volume: 471
Issue: 1-2
起始頁: 140
結束頁: 144
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