標題: Improved Efficiency of a Large-Area Cu(In,Ga)Se-2 Solar Cell by a Nontoxic Hydrogen-Assisted Solid Se Vapor Selenization Process
作者: Wu, Tsung-Ta
Hu, Fan
Huang, Jyun-Hong
Chang, Chia-ho
Lai, Chih-chung
Yen, Yu-Ting
Huang, Hou-Ying
Hong, Hwen-Fen
Wang, Zhiming M.
Shen, Chang-Hong
Shieh, Jia-Min
Chueh, Yu-Lun
光電學院
影像與生醫光電研究所
College of Photonics
Institute of Imaging and Biomedical Photonics
關鍵字: Cu(In,Ga)Se-2;hydrogen-assisted selenization;buried homojunction;Na diffusion
公開日期: 9-Apr-2014
摘要: A nontoxic hydrogen-assisted solid Se vapor selenization process (HASVS) technique to achieve a large-area (40 X 30 cm(2)) Cu(In,Ga)Se-2 (CIGS) solar panel with enhanced efficiencies from 7.1 to 10.8% (12.0% for active area) was demonstrated. The remarkable improvement of efficiency and fill factor comes from improved open circuit voltage (V-oc) and reduced dark current due to (1) decreased interface recombination raised from the formation of a widened buried homojunction with n-type Cd-cu participation and (2) enhanced separation of electron and hole carriers resulting from the accumulation of Na atoms on the surface of the CIGS film. The effects of microstructural, compositional, and electrical characteristics with hydrogen-assisted Se vapor selenization, including interdiffusion of atoms and formation of buried homojunction, were examined in detail. This methodology can be also applied to CIS (CuInSe2) thin film solar cells with enhanced efficiencies from 5.3% to 8.5% (9.4% for active area) and provides a facile approach to improve quality of CIGS and stimulate the nontoxic progress in the large scale CIGS PV industry.
URI: http://dx.doi.org/10.1021/am405780z
http://hdl.handle.net/11536/24240
ISSN: 1944-8244
DOI: 10.1021/am405780z
期刊: ACS APPLIED MATERIALS & INTERFACES
Volume: 6
Issue: 7
起始頁: 4842
結束頁: 4849
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