|標題:||Effect of interfacial layer on the crystal structure of InAs/AlAs0.16Sb0.84/AlSb quantum wells|
|作者:||Lin, Y. M.|
Chen, C. H.
Lee, C. P.
Department of Electronics Engineering and Institute of Electronics
Center for Nanoscience and Technology
|摘要:||Ion channeling technique using MeV C2+ ions and high resolution X-ray diffraction were used to study the crystal quality of an InAs/AlSb-based quantum wells. We found that the InAs quality has a strong dependence on the type of the interface used. With the addition of the InSb-like interface, the crystal quality of the InAs channel was greatly improved. The InAs lattice was fully strained and aligned with the lattice of the buffer layer without any lattice relaxation. On the other hand, if the interface was of the AlAs type, the lattice of the InAs quantum well was relaxed and the crystal quality was poor. This explains why a superior InAs quantum well with high electron mobility and good surface morphology can be achieved with the use of the InSb interface. (C) 2014 AIP Publishing LLC.|
|期刊:||JOURNAL OF APPLIED PHYSICS|
|Appears in Collections:||Articles|
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