標題: Effect of interfacial layer on the crystal structure of InAs/AlAs0.16Sb0.84/AlSb quantum wells
作者: Lin, Y. M.
Chen, C. H.
Lee, C. P.
電子工程學系及電子研究所
奈米科技中心
Department of Electronics Engineering and Institute of Electronics
Center for Nanoscience and Technology
公開日期: 28-Apr-2014
摘要: Ion channeling technique using MeV C2+ ions and high resolution X-ray diffraction were used to study the crystal quality of an InAs/AlSb-based quantum wells. We found that the InAs quality has a strong dependence on the type of the interface used. With the addition of the InSb-like interface, the crystal quality of the InAs channel was greatly improved. The InAs lattice was fully strained and aligned with the lattice of the buffer layer without any lattice relaxation. On the other hand, if the interface was of the AlAs type, the lattice of the InAs quantum well was relaxed and the crystal quality was poor. This explains why a superior InAs quantum well with high electron mobility and good surface morphology can be achieved with the use of the InSb interface. (C) 2014 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4872138
http://hdl.handle.net/11536/24221
ISSN: 0021-8979
DOI: 10.1063/1.4872138
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 115
Issue: 16
結束頁: 
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