標題: High-Efficiency and Crack-Free InGaN-Based LEDs on a 6-inch Si (111) Substrate With a Composite Buffer Layer Structure and Quaternary Superlattices Electron-Blocking Layers
作者: Li, Zhen-Yu
Lee, Chia-Yu
Lin, Da-Wei
Lin, Bing-Cheng
Shen, Kun-Ching
Chiu, Ching-Hsueh
Tu, Po-Min
Kuo, Hao-Chung
Uen, Wu-Yih
Horng, Ray-Hua
Chi, Gou-Chung
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: GaN;composite buffer layer structure;quaternary superlattices EBL;Si substrate;MOCVD;light-emitting diodes (LEDs)
公開日期: 1-May-2014
摘要: In this paper, a composite buffer layer structure (CBLS) with multiple AlGaN layers and grading of Al composition/u-GaN1/(AlN/GaN) superlattices/u-GaN2 and InAlGaN/AlGaN quaternary superlattices electron-blocking layers (QSLs-EBLs) are introduced into the epitaxial growth of InGaN-based light-emitting diodes (LEDs) on 6-inch Si (111) substrates to suppress cracking and improve the crystalline quality and emission efficiency. The effect of CBLS and QSLs-EBL on the crystalline quality and emission efficiency of InGaN-based LEDs on Si substrates was studied in detail. Optical microscopic images revealed the absence of cracks and Ga melt-back etching. The atomic force microscopy images exhibited that the root-meansquare value of the surface morphology was only 0.82 nm. The full widths at half maxima of the (0002) and (1012) reflections in the double crystal X-ray rocking curve were similar to 330 and 450 arcs, respectively. The total threading dislocation density, revealed by transmission electron microscopy, was <6 x 10(8) cm(-2). From the material characterizations, described above, blue and white LEDs emitters were fabricated using the epiwafers of InGaNbased LEDs on 6-inch Si substrates. The blue LEDs emitter that comprised blue LEDs chip and clear lenses had an emission power of 490 mW at 350 mA, a wall-plug efficiency of 45% at 350 mA, and an efficiency droop of 80%. The white LEDs emitter that comprised blue LEDs chip and yellow phosphor had an emission efficiency of similar to 110 lm/W at 350 mA and an efficiency droop of 78%. These results imply that the use of a CBLS and QSLs-EBL was found to be very simple and effective in fabricating high-efficiency InGaN-based LEDs on Si for solid-state lighting applications.
URI: http://dx.doi.org/10.1109/JQE.2014.2304460
http://hdl.handle.net/11536/24208
ISSN: 0018-9197
DOI: 10.1109/JQE.2014.2304460
期刊: IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume: 50
Issue: 5
起始頁: 354
結束頁: 363
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