標題: Optical properties of (1 (1)over-bar 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates
作者: Chiu, Ching-Hsueh
Lin, Da-Wei
Lin, Chien-Chung
Li, Zhen-Yu
Chen, Yi-Chen
Ling, Shih-Chun
Kuo, Hao-Chung
Lu, Tien-Chang
Wang, Shing-Chung
Liao, Wei-Tsai
Tanikawa, Tomoyuki
Honda, Yoshio
Yamaguchi, Masahito
Sawaki, Nobuhiko
光電系統研究所
光電工程學系
Institute of Photonic System
Department of Photonics
關鍵字: Metalorganic chemical vapor deposition;Quantum wells;Nitride;Semiconductor III-V materials;Light emitting diode
公開日期: 1-Mar-2011
摘要: We present a study of high quality (1 (1) over bar 0 1) GaN films and the InGaN/GaN multiple quantum wells (MQWs) using epitaxial lateral overgrowth (ELO) technique by atmospheric pressure metal organic chemical vapor deposition (MOCVD). The smooth coalescence of the stripes and surface morphology was measured by scanning electron microscope (SEM) and atomic force microscopy (AFM). Due to reduction in internal electric field, semipolar InGaN/GaN MQWs have higher radiative recombination rate from time-resolved photoluminescence (TRPL) measurement. In addition, from degree of polarization (DOP) measurement, we observed higher polarization ratio attributed to the induced anisotropic compressive strain. (C) 2010 Published by Elsevier B.V.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2010.10.054
http://hdl.handle.net/11536/241
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.10.054
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 318
Issue: 1
起始頁: 500
結束頁: 504
Appears in Collections:Conferences Paper


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