標題: EFFECTS OF N2O-PLASMA TREATMENT OF A-SIOXNY/A-SINX GATE INSULATORS ON ELECTRICAL STABILITY OF A-SIH THIN-FILM TRANSISTORS
作者: JEN, TS
LEU, ST
CHOU, TC
HONG, JW
CHANG, CY
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: THIN-FILM TRANSISTOR;ELECTRICAL STABILITY;N2O-PLASMA TREATMENT
公開日期: 15-七月-1994
摘要: N2O-plasma was used to treat the as-deposited a-SiO(x)N(y)/a-SiN(x) gate insulators of inverted-staggered a-Si:H thin-film transistors (TFTs), and its effects on electrical properties of TFTs were investigated. The TFTs with N2O-plasma-treated gate insulators tended to have a smaller threshold voltage (V(th)), V(th) Shift and hysteresis width (W(FB)) of the forward and backward transfer characteristics. In addition, the results of a bias-temperature stress (BTS) experiment showed that the N2O-Plasma-treated devices had a smaller decay of drain current with time. These phenomena demonstrated that the N2O-PlasMa treatment could be used to improve the electrical stability of a-Si:H TFTs.
URI: http://dx.doi.org/10.1143/JJAP.33.L977
http://hdl.handle.net/11536/2406
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.L977
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 33
Issue: 7B
起始頁: L977
結束頁: L979
顯示於類別:期刊論文


文件中的檔案:

  1. A1994PA98300001.pdf