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dc.contributor.authorLIEN, CSen_US
dc.contributor.authorHUANG, YMen_US
dc.contributor.authorWANG, JFen_US
dc.date.accessioned2014-12-08T15:03:52Z-
dc.date.available2014-12-08T15:03:52Z-
dc.date.issued1994-07-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.357887en_US
dc.identifier.urihttp://hdl.handle.net/11536/2403-
dc.description.abstractThe third-order nonlinear optical susceptibility chi(3)(3omega) due to the intersubband transitions in the four-level AlInAs/GaInAs compositionally asymmetric coupled quantum well (CACQW) is investigated theoretically. The subband eigenenergy E(n) of the CACQW structure could be designed to form an equally spaced energy-level ladder. Since the eigenenergy spacing could be designed to resonate with the pumping source, the third-order nonlinear optical susceptibility could be greatly enhanced through the triple resonance. Based on the theoretical calculations, a magnitude of chi(3)(3omega) as high as 2.2 X 10(5) (nm/V)2 can be achieved for the CACQW structure. This is a more than eight orders of magnitude enhancement as compared to that of the bulk value in GaAs. In addition to the design of CACQW structure, the triple resonance can also be achieved by biasing the CACQW under a proper electric field due to the large Stark effect of the CACQW structure.en_US
dc.language.isoen_USen_US
dc.titleTRIPLY RESONANT ENHANCEMENT OF 3RD-ORDER NONLINEAR-OPTICAL SUSCEPTIBILITY IN COMPOSITIONALLY ASYMMETRIC COUPLED QUANTUM-WELLSen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.357887en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume76en_US
dc.citation.issue2en_US
dc.citation.spage1008en_US
dc.citation.epage1012en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994NX40000056-
dc.citation.woscount14-
Appears in Collections:Articles