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dc.contributor.authorLiu, Che-Yuen_US
dc.contributor.authorChen, Kuo-Juen_US
dc.contributor.authorLin, Da-Weien_US
dc.contributor.authorLee, Chia-Yuen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorChien, Shih-Hsuanen_US
dc.contributor.authorShih, Min-Hsiungen_US
dc.contributor.authorChi, Gou-Chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2014-12-08T15:35:31Z-
dc.date.available2014-12-08T15:35:31Z-
dc.date.issued2014-02-24en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.22.004516en_US
dc.identifier.urihttp://hdl.handle.net/11536/24029-
dc.description.abstractMicro-patterned PDMS film was fabricated and combined with LED chip on board (COB) package to improve the emission uniformity of LED chip. The micro scale patterned sapphire substrate (PSS) was used as a mold to fabricate micro-cone patterned PDMS (MC-PDMS) film. A strong scattering effect from this MC-PDMS film can be verified by the high haze ratio and the Bi-directional Transmission effect. The angle dependent color temperature measurement system was used to measure the Delta CCT of COB with and without MC-PDMS. The measurement results indicate that the Delta CCT was reduced from 1025K to 428K. This improvement can effectively eliminate the yellow ring effect of LED chip. This technology can be thus considered as a cost-effective way for the next generation of light source packages. (C) 2014 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleImprovement of emission uniformity by using micro-cone patterned PDMS filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.22.004516en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume22en_US
dc.citation.issue4en_US
dc.citation.spage4516en_US
dc.citation.epage4522en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000332520000082-
dc.citation.woscount4-
Appears in Collections:Articles


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