Title: The Effect of CdS QDs Structure on the InGaP/GaAs/Ge Triple Junction Solar Cell Efficiency
Authors: Chung, Chen-Chen
Tran, Binh Tinh
Han, Hau-Vei
Ho, Yen-Teng
Yu, Hung-Wei
Lin, Kung-Liang
Nguyen, Hong-Quan
Yu, Peichen
Kuo, Hao-Chung
Chang, Edward Yi
Department of Materials Science and Engineering
Department of Photonics
Keywords: CdS;quantum dots;triple-junction solar cell
Issue Date: 1-Mar-2014
Abstract: This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) fabricated by a novel chemical solution. With the anti-reflective feature at long wavelength and down-conversion at UV regime, the CdS quantum dot effectively enhance the overall power conversion efficiency more than that of a traditional GaAs-based device. Experimental results indicate that CdS quantum dot can enhance the short-circuit current by 0.33 mA/cm(2), which is observed for the triple-junction solar cells with CdS QDs of about 3.5 nm in diameter. Moreover, the solar cell conversion efficiency is improved from 28.3% to 29.0% under one-sun AM 1.5 global illumination I-V measurement.
URI: http://dx.doi.org/10.1007/s13391-013-3202-3
ISSN: 1738-8090
DOI: 10.1007/s13391-013-3202-3
Volume: 10
Issue: 2
Begin Page: 457
End Page: 460
Appears in Collections:Articles