|標題:||Static Induction Transistor Using TaN Thin Film as Gate Electrode for High-Performance Application|
|作者:||Zheng, Z. W.|
Chen, Y. C.
Institute of Photonic System
|關鍵字:||static induction transistor (SIT);semiconductors;thin films;electrical properties|
|摘要:||In this study, static induction transistor (SIT) using TaN thin film as gate electrode was fabricated and the characteristics of this device were investigated. The electrical characteristics showed that the drain-source current was controlled by the bias voltage that applied to the TaN gate electrode. The typical SIT operations with non-saturation property and a transition from linear to nonlinear behavior were observed in the drain-source I-V characteristics. Furthermore, compared with the traditional devices, this SIT device can obtain a high working current (similar to 5 mA) at a low driving voltage (similar to 3 V) with a small threshold voltage (similar to 1 V), showing its high potential for high current and low voltage application.|
|期刊:||ELECTRONIC MATERIALS LETTERS|