標題: Chemical-mechanical polishing of low-dielectric-constant spin-on-glasses: film chemistries, slurry formulation and polish selectivity
作者: Wang, YL
Liu, C
Chang, ST
Tsai, MS
Feng, MS
Tseng, WT
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: spin-on-glass;chemical-mechanical polishing;zirconia oxide;slurry
公開日期: 31-Oct-1997
摘要: Alkyl siloxane-based low-dielectric-constant (low-k) spin-on-glass (SOG) thin films with varying amounts of organic content were subjected to polishing experiments using silica-and ZrO2-based slurries with a variety of additives, As the amount of organic content in SOG increases, the chemical-mechanical polishing (CMP) removal rate decreases with silica-based potassium hydroxide-added slurry. On the other hand, zirconia-based slurry resulted in higher removal rates for both SOG (>400 nm/min) and thermal oxide and an adjustment in polish selectivity (related to thermal oxide) ranging from 1.2 to 9.1 can be achieved by adding various amounts of tetra-alkyl substituted ammonium hydroxide. Post-CMP materials characterization by Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM) shows the chemical stability and CMP compatibility of SOG thin films. (C) 1997 Elsevier Science S.A.
URI: http://dx.doi.org/10.1016/S0040-6090(97)00491-4
http://hdl.handle.net/11536/240
ISSN: 0040-6090
DOI: 10.1016/S0040-6090(97)00491-4
期刊: THIN SOLID FILMS
Volume: 308
Issue: 
起始頁: 550
結束頁: 554
Appears in Collections:Conferences Paper


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