標題: Effect of ion-milled barriers on electron transport in micrometer-sized tunnel junctions
作者: Lee, Yen-Chi
Lin, Yong-Han
Wu, Jong-Ching
Lin, Juhn-Jong
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
關鍵字: electron tunnelling;ion milling;interfacial roughness
公開日期: 12-Mar-2014
摘要: We studied the electron transport properties of micrometre-sized all-Al tunnel junctions (TJs) between 2 and 300 K, in which the AlOx layer grown by O-2 plasma was moderately Ar-ion-milled prior to top electrode deposition. In contrast to the direct tunnelling in the TJs whose barriers are intact (not ion-milled), the zero-bias conductances and the current-voltage characteristics of the TJs as processed are found to be best described by the fluctuation-induced tunnelling conduction mechanism. This observation indicates the formation of nanoscopic incomplete pinholes in the AlOx layer, owing to large junction-barrier interfacial roughness introduced by the ion-milling process. Topographical features revealed by the cross-sectional transmission electron microscopy imaging of the TJ stack conform to this result. This study is of relevance to cases in which ion-milling techniques are applied in tailoring the TJ properties.
URI: http://dx.doi.org/10.1088/0022-3727/47/10/105305
http://hdl.handle.net/11536/23983
ISSN: 0022-3727
DOI: 10.1088/0022-3727/47/10/105305
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 47
Issue: 10
結束頁: 
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